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APT50GR120B2 Datasheet(PDF) 3 Page - Microsemi Corporation |
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APT50GR120B2 Datasheet(HTML) 3 Page - Microsemi Corporation |
3 / 44 page 3 Insulated Gate Bipolar Transistors (IGBTs) 10 20 30 40 50 60 70 80 90 100 110 120 IGBT Switching Frequency Ranges (kHz, hard switched) 600V 1200V 900V Thunderbolt® NPT Thunderbolt® NPT Thunderbolt® High Speed (HS) NPT Fast NPT Standard Series Voltage Ratings (V) Technology Easy to Parallel Short Circuit SOA Comment Thunderbolt® 600, 1200 NPT X X General purpose, high speed Thundebolt® High Speed 600 NPT X X Highest speed FAST 1200 NPT X X General purpose, medium speed MOS 7™ 1200 PT Ultra-low gate charge MOS 8™ 600, 900, 1200 PT, NPT Highest efficiency Field Stop Trench Gate 600, 1200 Field Stop X X Lowest conduction loss Power MOS 8TM PT Power MOS 8TM PT Field Stop Field Stop IGBTs from Microsemi IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The fre- quency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop. Product Options All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. Package options include TO-220, TO-247, T-MAX®, TO-264, and SOT-227. Customized products are available; contact factory for details. Power MOS 7TM PT Power MOS 8TM NPT (NEW!) Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information. |
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