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APT200GN60B2G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APT200GN60B2G
Description  Power Semiconductors Power Modules RF Power MOSFETs
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT200GN60B2G Datasheet(HTML) 2 Page - Microsemi Corporation

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“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“COOLMOS” is a trademark of Infineon Technologies AG”
ASPM®, Power MOS V®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions
for communications, defense & security, aerospace and industrial markets. Products include high-performance,
radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power
management products; timing and voice processing devices; RF solutions; discrete components; security
technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design
capabilities and services.
Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more
at www.microsemi.com.
CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS
Page No.
IGBTs (Insulated Gate Bipolar Transistors)......................................................................3-5
Power MOS 8TM MOSFETs / FREDFETs ............................................................................6-8
Ultra Low Gate Charge MOSFETs ...................................................................................... 9
COOLMOSTM MOSFETs..................................................................................................... 10
High Voltage Linear MOSFETs ......................................................................................... 10
DIODES
SiC Schottky and Ultra Fast Recovery Diodes ............................................................11-13
HIGH VOLTAGE RF MOSFETS........................................................................................ 14
DRIVER-RF MOSFET HYBRIDS ...................................................................................... 14
HIGH FREQUENCY RF MOSFETS .................................................................................. 15
REFERENCE DESIGN KIT .............................................................................................. 15
POWER MODULES
Contents.......................................................................................................................... 16
Electrical Configuration ................................................................................................... 17
Packaging........................................................................................................................ 18
Know How and Capabilities .......................................................................................19-20
Part Numbering System ................................................................................................... 21
IGBTs (Insulated Gate Bipolar Transistors) ................................................................22-26
MOSFETs ....................................................................................................................27-31
Renewable Energy Power Modules ............................................................................31-32
SiC Power Modules.....................................................................................................33-35
Diodes and Rectifiers .................................................................................................36-38
PACKAGE OUTLINE DRAWINGS.............................................................................. 39-43


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