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APT35GP120BG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT35GP120BG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 44 page “COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG” ASPM®, Power MOS V®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation About Microsemi Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com. CONTENTS HIGH VOLTAGE SMPS TRANSISTORS Page No. IGBTs (Insulated Gate Bipolar Transistors)......................................................................3-5 Power MOS 8TM MOSFETs / FREDFETs ............................................................................6-8 Ultra Low Gate Charge MOSFETs ...................................................................................... 9 COOLMOSTM MOSFETs..................................................................................................... 10 High Voltage Linear MOSFETs ......................................................................................... 10 DIODES SiC Schottky and Ultra Fast Recovery Diodes ............................................................11-13 HIGH VOLTAGE RF MOSFETS........................................................................................ 14 DRIVER-RF MOSFET HYBRIDS ...................................................................................... 14 HIGH FREQUENCY RF MOSFETS .................................................................................. 15 REFERENCE DESIGN KIT .............................................................................................. 15 POWER MODULES Contents.......................................................................................................................... 16 Electrical Configuration ................................................................................................... 17 Packaging........................................................................................................................ 18 Know How and Capabilities .......................................................................................19-20 Part Numbering System ................................................................................................... 21 IGBTs (Insulated Gate Bipolar Transistors) ................................................................22-26 MOSFETs ....................................................................................................................27-31 Renewable Energy Power Modules ............................................................................31-32 SiC Power Modules.....................................................................................................33-35 Diodes and Rectifiers .................................................................................................36-38 PACKAGE OUTLINE DRAWINGS.............................................................................. 39-43 |
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