1

Subject to change without notice.

www.cree.com

FEATURES

• EZBrightPowerChipLEDRfPerformance

– 110mWmin.@150mA–450&460nm

– 90mWmin.@150mA-470nm

– 40mWmin.@150mA-527nm

• LambertianRadiation

• ConductiveEpoxy,SolderPasteorPreforms,

orFluxEutecticAttach

• LowForwardVoltage–3.4VTypicalat150mA

• SingleWireBondStructure

• MaximumDCForwardCurrent-300mA

● DielectricPassivationAcrossEpiSurface

APPLICATIONS

• GeneralIllumination

– Automobile

– Aircraft

– DecorativeLighting

– TaskLighting

– OutdoorIllumination

• WhiteLEDs

• CrosswalkSignals

• TelevisionBacklighting

Data Sheet

CxxxEZ500-Sxxx00-2

Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN

materialswithCree’sproprietaryopticaldesignanddevicetechnologytodeliversuperiorvalueforhigh-intensityLEDs.

TheopticaldesignmaximizeslightextractionefficiencyandenablesaLambertianradiationpattern.Additionally,these

LEDsaredieattachablewithconductiveepoxy,solderpasteorsolderpreforms,aswellasthefluxeutecticmethod.

Theseverticallystructured,lowforwardvoltageLEDchipsareapproximately170micronsinheight.Cree’sEZ™chips

aretestedforconformitytoopticalandelectricalspecifications.TheseLEDsareusefulinabroadrangeofapplications,

suchasgeneralillumination,automotivelightingandLCDbacklighting.

CxxxEZ500-Sxxx00-2 Chip Diagram

Top View

Bottom View

EZBrightLEDChip

480x480

t=170

μm

Backside

Metallization

GoldBondPad

130x130

Die Cross Section

Anode(+);

3

μmAuSn

Cathode(-)