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AU1PJ-M385A Datasheet(PDF) 1 Page - Vishay Siliconix |
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AU1PJ-M385A Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM www.vishay.com Vishay General Semiconductor Revision: 29-Aug-13 1 Document Number: 89291 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Ultrafast Avalanche Rectifiers TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds of AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recoveray times for high frequency • Low reverse current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A, 25 A trr 75 ns IR 1 μA EAS 20 mJ VF at IF = 1.0 A 1.6 V TJ max. 175 °C Package DO-220AA (SMP) Diode variations Single die DO-220AA (SMP) eSMP ® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL AU1PD AU1PG AU1PJ AU1PK AU1PM UNIT Device marking code AUD AUG AUJ AUK AUM Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V Average forward current IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 25 A Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
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