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BUK961R6-40E Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK961R6-40E Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK961R6-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 16 May 2012 8 of 14 NXP Semiconductors BUK961R6-40E N-channel TrenchMOS logic level FET Tj = 25 °C; tp = 300 µs Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 13. Gate charge waveform definitions 003aah026 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 VGS (V) ID (A) max typ min 003aag340 0 2 4 6 0 100 200 300 ID (A) RDSon (m Ω) 2.8 2.6 3.0 VGS (V) = 5.0 3.5 10.0 003aag820 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) |
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