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DF01S Datasheet(PDF) 1 Page - Vishay Siliconix |
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DF01S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page DF005S, DF01S, DF02S, DF04S, DF06S, DF08S, DF10S www.vishay.com Vishay General Semiconductor Revision: 19-Aug-13 1 Document Number: 88573 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: DFS Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Note (1) Units mounted on PCB with 0.51" x 0.51" (13 mm x 13 mm) copper pads Note (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V PRIMARY CHARACTERISTICS Package DFS IF(AV) 1 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 50 A IR 5 μA VF at IF = 1.0 A 1.1 V TJ max. 150 °C Diode variations Quad ~ ~ Case Style DFS ~ ~ MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT Device marking code DF005S DF01S DF02S DF04S DF06S DF08S DF10S Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 40 °C (1) IF(AV) 1.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 50 A Rating for fusing (t < 8.3 ms) I2t10 A2s Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT Maximum instantaneous forward voltage drop per diode 1.0 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 °C IR 5.0 μA TA = 125 °C 500 Typical junction capacitance per diode (1) CJ 25 pF |
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