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AD8047 Datasheet(PDF) 4 Page - Analog Devices |
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AD8047 Datasheet(HTML) 4 Page - Analog Devices |
4 / 17 page REV. A AD8047/AD8048 –3– CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8047/AD8048 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by these devices is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150 °C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175 °C for an extended period can result in device failure. While the AD8047 and AD8048 are internally short circuit protected, this may not be sufficient to guarantee that the maxi- mum junction temperature (150 °C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves. 2.0 0 –50 80 1.5 0.5 –40 1.0 0 10 –10 –20 –30 20 30 40 50 60 70 90 AMBIENT TEMPERATURE ( C) TJ = +150 C 8-PIN PDIP PACKAGE 8-PIN SOIC PACKAGE Figure 2. Plot of Maximum Power Dissipation vs. Temperature ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage, (+VS) – (–VS) . . . . . . . . . . . . . . . . . . . . 12.6 V Voltage Swing × Bandwidth Product AD8047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 V-MHz AD8048 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V-MHz Internal Power Dissipation 2 Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.9 W Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V S Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±1.2 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves Storage Temperature Range (N, R) . . . . . . . –65 °C to +125°C Operating Temperature Range (A Grade) . . . –40 °C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300 °C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead PDIP Package, JA = 90 °C/W; 8-Lead SOIC Package, JA = 140 °C/W METALLIZATION PHOTOS Dimensions shown in inches and (mm) Connect Substrate to –VS. AD8047 +VS VOUT –VS –IN +IN 0.045 (1.14) 0.044 (1.13) AD8048 +VS VOUT –VS –IN +IN 0.045 (1.14) 0.044 (1.13) ORDERING GUIDE Temperature Package Package Model Range Description Option * AD8047AN –40 °C to +85°CPDIP N-8 AD8047AR –40 °C to +85°C SOIC R-8 AD8047AR-REEL –40 °C to +85°C SOIC R-8 AD8047AR-REEL7 –40 °C to +85°C SOIC R-8 AD8048AN –40 °C to +85°CPDIP N-8 AD8048AR –40 °C to +85°C SOIC R-8 AD8048AR-REEL –40 °C to +85°C SOIC R-8 AD8048AR-REEL7 –40 °C to +85°C SOIC R-8 *N = PDIP, R= SOIC |
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