New Product

VS-ETH1506S-M3, VS-ETH1506-1-M3

www.vishay.com

Vishay Semiconductors

Revision: 28-Sep-12

1

Document Number: 93573

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Designed

and

qualified

according

to

JEDEC-JESD47

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

DESCRIPTION/APPLICATIONS

Hyperfast recovery rectifiers designed with optimized

performance of forward voltage drop, hyperfast recovery

time, and soft recovery.

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

These devices are intended for use in PFC Boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.





PRODUCT SUMMARY

Package

15 A

600 V

2.45 V

21 ns

175 °C

Diode variation

Single die

VS-ETH1506S-M3

VS-ETH1506-1-M3

TO-262

N/C

Anode

1

3

2

Anode

1

3

Base

cathode

2

N/C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Repetitive peak reverse voltage

600

V

Average rectified forward current

15

A

Non-repetitive peak surge current

160

Operating junction and storage

temperatures

- 65 to 175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,



blocking voltage

600

-

-

V

Forward voltage

-

1.8

2.45

-

1.25

1.6

Reverse leakage current

-

0.01

15

μA

-

20

200

Junction capacitance

-

12

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

8.0

-

nH