TISP5070H3BJ datasheet(3/11 Pages) BOURNS | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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TISP5070H3BJ Datasheet(PDF) 3 Page - Bourns Electronic Solutions

Part #	TISP5070H3BJ

Description	FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

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Manufacturer	BOURNS [Bourns Electronic Solutions]

Direct Link	http://www.bourns.com

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3 / 11 page

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Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

JANUARY 1998 - REVISED JANUARY 2007

Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)

TISP5xxxH3BJ Overvoltage Protection Series

I(BO)

Breakover current

dv/dt = -250 V/ms, RSOURCE = 300 Ω

-150

-600

mA

VF

Forward voltage

IF =5A, tW = 500 µs3

V

VFRM

Peak forward recovery voltage

dv/dt ≤ +1000 V/µs, Linear voltage ramp,

Maximum ramp value = +500 V

di/dt = +20 A/µs, Linear current ramp,

Maximum ramp value = +10 A

5V

VT

On-state voltage

IT =-5A, tw = 500 µs-3

V

IH

Holding current

IT = -5 A, di/dt = +30 mA/ms

-150

-600

mA

dv/dt

Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM

-5

kV/µs

ID

Off-state current

VD = -50 V

TA = 85 °C

-10

µA

CO

Off-state capacitance

(see Note 6)

f = 1 MHz, Vd = 1 V rms, VD = -1 V

'5070H3BJ

'5080H3BJ

'5095H3BJ

'5110H3BJ

'5115H3BJ

'5150H3BJ

'5190H3BJ

300

280

260

240

214

140

140

420

390

365

335

300

195

195

pF

f = 1 MHz, Vd = 1 V rms, VD = -2 V

'5070H3BJ

'5080H3BJ

'5095H3BJ

'5110H3BJ

'5115H3BJ

'5150H3BJ

'5190H3BJ

260

245

225

205

180

120

120

365

345

315

285

250

170

170

f = 1 MHz, Vd = 1 V rms, VD = -50 V

'5070H3BJ

'5080H3BJ

'5095H3BJ

'5110H3BJ

'5115H3BJ

'5150H3BJ

'5190H3BJ

90

80

73

65

56

35

35

125

110

100

90

80

50

50

f = 1 MHz, Vd = 1 V rms, VD = -100 V

'5150H3BJ

'5190H3BJ

30

30

40

30

NOTE:

6. Up to 10 MHz the capacitance is essentially independent of frequency.

Above 10 MHz the effective capacitance is strongly

dependent on connection inductance.

Parameter

Test Conditions

Min Typ Max

Unit

RθJA

Junction to ambient thermal resistance

EIA/JESD51-3 PCB, IT = ITSM(1000)

(see Note 7)

113

°C/W

265 mm x 210 mm populated line card,

4-layer PCB, IT = ITSM(1000)

50

NOTE:

7.

EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

Parameter

Test Conditions

Min Typ Max Unit

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