JULY 2010 - REVISED MAY 2012

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

t

i

n

U

e

u

l

a

V

l

o

b

m

y

S

g

n

i

t

a

R

C

°

0

4

-

0

=

-170

V

V

C

°

0

4

-

0

=

-167

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

30

40

120

A

85

Non-repetitive peak on-state current, 60 Hz (see Notes 1, 2 and 3)

0.5

A

900 s

Non-repetitive peak ga

I

)

2

d

n

a

1

s

e

t

o

N

e

e

s

(

d

e

n

o

m

m

o

c

s

e

d

o

h

t

a

c

,

e

s

l

u

p

s

µ

0

1

/

2

,

t

n

e

r

r

u

c

e

t

GSM

40

A

Junction temperature

-40 to +150

°C

Storage temperature range

-40 to +150

°C

conditions.

2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied to any cathode-

anode terminal pair. Additionally, all cathode-anode terminal pairs may have their rated current values applied simultaneously (in

this case the anode terminal current will be four times the rated current value of an individual terminal pair).

3. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm

printed wiring track widths.

Min

Typ

Max

Unit

100

nF

t

i

d

n

o

C

t

s

e

T

r

e

t

e

m

a

r

a

P

t

i

n

U

x

a

M

p

y

T

n

i

M

s

n

o

i

Off-state current

-5

µA

Breakover voltage

V

4

6

-

F

n

0

0

1

=

Forward voltage

3V

Peak forward recovery

voltage

V

2

1

F

n

0

0

1

=

Holding current

A

m

0

5

1

-

100 V

-

=

Gate reverse current

A

µ

5

-

0

=

Gate trigger current

A

m

5

100 V

-

=

Gate trigger voltage

V

5

.

2

100 V

-

=

Anode-cathode off-state

capacitance

100

pF

50

NOTE:

5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

10/1000 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)

5/310 µs (ITU-T K.20/21/45, YD/T-950, open circuit voltage waveshape 10/700)

2/10 µs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)

2/40 µs (IEC61000-4-5, 1.2/50 µs open circuit voltage, 2 ohm + 10 ohm, see Note 4)

4. Combination wave generator as specified in ITU-T K.20, K.21, K.44.

TISP61089QB SLIC Overvoltage Protector

Recommended Operating Conditions

Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)