SQJ456EP-T1-GE3 datasheet(5/7 Pages) VISHAY

Part #	SQJ456EP-T1-GE3

Description	Automotive N-Channel 100 V (D-S) 175 째C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SQJ456EP

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Vishay Siliconix

S11-2288-Rev. F, 28-Nov-11

5

Document Number: 65279

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Safe Operating Area

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

TC = 25 °C

Single Pulse

100 µs

BVDSS Limited

1 ms

10 ms

100 ms, 1 s, 10 s, DC

Limited by R

*

DS(on)

ID Limited

IDM Limited

10-3

10-2

1

10

600

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 65 °C/W

3. T JM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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SQJ456EP-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

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