EDE2108AEBG-8E-F datasheet(9/73 Pages) ELPIDA

Part #	EDE2108AEBG-8E-F

Description	2G bits DDR2 SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

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EDE2108AEBG

Data Sheet E1950E11 (Ver.1.1)

9

Parameter

Symbol

Grade

max.

Unit

Test condition

Self-refresh current

IDD6*

7

12

mA

Self-Refresh Mode;

CK and /CK at 0V;

CKE

0.2V;

Other control and address bus inputs are FLOATING;

Data bus inputs are FLOATING

Operating current

(Bank interleaving)

IDD7

170

mA

all bank interleaving reads, IOUT = 0mA;

BL = 4, CL = CL(IDD), AL = tRCD (IDD)

1

 tCK (IDD);

tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD),

tFAW = tFAW (IDD), tRCD = 1

 tCK (IDD);

CKE is H, /CS is H between valid commands;

Address bus inputs are STABLE during DESELECTs;

Data pattern is same as IDD4W;

Notes: 1. IDD specifications are tested after the device is properly initialized.

2. Input slew rate is specified by AC Input Test Condition.

3. IDD parameters are specified with ODT disabled.

4. Data bus consists of DQ, DM, DQS, /DQS, RDQS and /RDQS.

IDD values must be met with all combinations of EMRS bits 10 and 11.

5. Definitions for IDD

L is defined as VIN

VIL (AC) (max.)

H is defined as VIN

VIH (AC) (min.)

STABLE is defined as inputs stable at an H or L level

FLOATING is defined as inputs at VREF = VDDQ/2

SWITCHING is defined as:

inputs changing between H and L every other clock cycle (once per two clocks) for address and control

signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals

not including masks or strobes.

6. Refer to AC Timing for IDD Test Conditions.

7. IDD6 will increase by 80% if TC

≥ +85°C and high temperature self-refresh rate option is enabled.

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