VMO1200-01F datasheet(1/6 Pages) IXYS

Part #	VMO1200-01F

Description	PolarHT??Module N-Channel Enhancement Mode

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Manufacturer	IXYS [IXYS Corporation]

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20100614b

VMO 1200-01F

V

DSS

= 100 V

I

D25

= 1220 A

R

DS(on) =

1.25 mΩ max.

PolarHT™ Module

MOSFET

Symbol

Conditions

Maximum Ratings

V

DSS

T

VJ = 25°C to 150°C

100

V

GS

± 20

V

I

D25

I

D80

T

C = 25°C

T

C = 80°C

1220

970

A

I

F25

I

F80

T

C = 25°C (diode)

T

C = 80°C (diode)

1220

970

A

N-Channel Enhancement Mode

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

R

DSon

V

GS = 10 V; ID = ID80

T

VJ =

25°C

T

VJ = 125°C

1.00

1.62

1.25

2.00

mΩ

V

GS(th)

V

DS = 20 V; ID = 3 mA

3

5

V

I

DSS

V

DS = 0.8 • VDSS; VGS = 0 V; TVJ =

25°C

T

VJ = 125°C

0.3

6

mA

I

GSS

V

GS = ± 20 V; VDS = 0 V

1.2

µA

Q

g

Q

gs

Q

gd

V

GS = 10 V; VDS = 50 V; ID = 1000 A

1710

396

1020

nC

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

rec

inductive load

V

GS = 10 V; VDS = 50 V

I

D = 1000 A; RG = 1.8 Ω

T

VJ =

25°C

R

G = RG ext + Rout driver

360

1620

460

1020

7.7

62.3

0.57

ns

mJ

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

rec

inductive load

V

GS = 10 V; VDS = 50 V

I

D = 1000 A; RG = 1.8 Ω

T

VJ = 125°C

R

G = RG ext + Rout driver

400

1640

560

820

8.5

58.9

0.82

ns

mJ

R

thJC

R

thJH

with heat transfer paste (IXYS test setup)

0.065

0.053

0.088

K/W

Features

• PolarHT™ MOSFET technology

- low R

DSon

- dv/dt ruggedness

- fast intrinsic reverse diode

• package

- low inductive current path

- screw connection to high current

main terminals

- use of non interchangeable

connectors for auxiliary terminals

possible

- Kelvin source terminals for easy drive

- isolated DCB ceramic base plate

Applications

• converters with high power density for

- main and auxiliary AC drives of

electric vehicles

- DC drives

- power supplies

D

S

G

KS

S

D

G

KS

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