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TC7USB40MU Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. TC7USB40MU
Description  CMOS Digital Integrated Circuits Silicon Monolithic
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7USB40MU
5
10.3.
10.3.
10.3.
10.3. Analog Switch (Note) (Unless otherwise specified, T
Analog Switch (Note) (Unless otherwise specified, T
Analog Switch (Note) (Unless otherwise specified, T
Analog Switch (Note) (Unless otherwise specified, Taaaa = -40 to 85
= -40 to 85
= -40 to 85
= -40 to 85๎€Œ
๎€Œ
๎€Œ
๎€Œ))))
Characteristics
OFF isolation (non-adjacent)
Crosstalk (non-adjacent)
-3dB Bandwidth
Symbol
OIRR
Xtalk
BW
Note
Test Condition
RT = 50 โ„ฆ, f = 240 MHz,
See Fig. 11.6
RT = 50 โ„ฆ, f = 240 MHz,
See Fig. 11.7
RL = 50 โ„ฆ, CL = 0 pF,
See Fig. 11.8
VCC (V)
3.3 ยฑ 0.3
Min
๎€ฅ
๎€ฅ
๎€ฅ
Typ.
-24
-30
1500
Max
๎€ฅ
๎€ฅ
๎€ฅ
Unit
dB
MHz
Note:
All typical values are at Ta = 25๎€Œ.
Parameter guaranteed by design.
10.4.
10.4.
10.4.
10.4. Capacitive Characteristics (Note) (Unless otherwise specified, T
Capacitive Characteristics (Note) (Unless otherwise specified, T
Capacitive Characteristics (Note) (Unless otherwise specified, T
Capacitive Characteristics (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25๎€Œ
๎€Œ
๎€Œ
๎€Œ))))
Characteristics
Input capacitance
(OE, S)
Switch terminal OFF-capacitance
(D+, D-)
Switch terminal OFF-capacitance
(1D+, 1D-, 2D+, 2D-)
Switch terminal ON-capacitance
Symbol
CIN
CI/O
Note
Test Condition
VIN = 0 V
OE = VCC, VIS = 0 V
OE = GND, VIS = 0 V
VCC (V)
3.3
Typ.
3
3
2
5
Unit
pF
Note:
Parameter guaranteed by design.
2012-09-27
Rev.1.0




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