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SI4906DY Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI4906DY Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 73867 S09-2432-Rev. C, 16-Nov-09 Vishay Siliconix Si4906DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1 10 100 VSD - Source-to-Drain Voltage (V) 1.0 0.8 0.6 0.4 0.2 0.0 1.2 0.1 25 °C T = 150 °C J - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.06 0.12 0.18 0.24 0.30 0246 8 10 VGS - Gate-to-Source Voltage (V) 25 °C 125 °C 0 60 100 20 40 Time (s) 80 10 1 0.1 0.01 0.001 Safe Operating Area, Junction-to-Ambient 100 0.01 10 0.1 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 0.1 100 10 1 1 TA = 25 °C Single Pulse Limited by RDS(on)* 1 ms 10 ms 100 ms 1 s 10 s DC |
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