BZT03C27 datasheet(1/5 Pages) VISHAY

Part #	BZT03C27

Description	Silicon Zener-Diodes with Surge Current Specification

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Manufacturer	VISHAY [Vishay Siliconix]

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VISHAY

BZT03..Series

Document Number 85599

Rev. 4, 10-Sep-03

Vishay Semiconductors

www.vishay.com

1

949539

Silicon Zener-Diodes with Surge Current Specification

Features

• Glass passivated junction

• Hermetically sealed package

• Clamping time in picoseconds

Applications

Medium power voltage regulators and medium power

transient suppression circuits

Mechanical Data

Case:SOD57

Weight: 370 mg (max.500 mg)

Packaging Codes/Options:

TAP / 5 K Ammopack (52 mm tape) / 25 K/box

TR / 5 K 10" reel

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Power dissipation

l = 10 mm, TL = 25 °C

PV

3.25

W

Tamb = 25 °C

PV

1.3

W

Repetitive peak reverse power

dissipation

PZRM

10

W

Non repetitive peak surge power

dissipation

tp = 100 µs, Tj = 25 °C

PZSM

600

W

Junction temperature

Tj

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

l = 10 mm, TL = constant

RthJA

46

K/W

on PC board with spacing 25 mm

RthJA

100

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 0.5 A

VF

1.2

V

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