Subject to change without notice.

www.cree.com

FEATURES

Thin 95 μm Chip

Reduced Forward Voltage

2.9V Typical at 5 mA

RazerThin LED Performance

460nm - 3.8-11.1 mW

470nm - 3.4-10.4 mW

527nm - 1.7-6.0 mW

Single Wire Bond Structure

Class 2 ESD Rating

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APPLICATIONS

Mobile Phone Key Pads

White LEDs

Blue LEDs

Green LEDs

Cellular Phone LCD Backlighting

Digital Camera Flash for Mobile Appliance

Automotive Dashboard Lighting

LED Video Displays

Audio Product Display Lighting

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CxxxRT290-S000

Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials

with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green

LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward

voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs

include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.

CxxxRT290-S000 Chip Diagram

Top View

Bottom View

G•SiC LED Chip

270 x 270 μm

SiC Substrate

h = 95 μm

Backside

Metallization

Gold Bond Pad

110 μm Diameter

Die Cross Section

Cathode (-)

Anode (+)

Mesa (junction)

246 x 246 μm

InGaN