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A42L8316 Datasheet(PDF) 3 Page - AMIC Technology

Part # A42L8316
Description  256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
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Manufacturer  AMICC [AMIC Technology]
Direct Link  http://www.amictechnology.com
Logo AMICC - AMIC Technology

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A42L8316 Series
PRELIMINARY
(August, 2002, Version 0.1)
2
AMIC Technology, Inc.
Selection Guide
Symbol
Description
-30
-35
-40
Unit
tRAC
Maximum RAS Access Time
30
35
40
ns
tAA
Maximum Column Address Access Time
16
17
18
ns
tCAC
Maximum CAS Access Time
9
10
11
ns
tOEA
Maximum Output Enable ( OE ) Access Time
9
10
11
ns
tRC
Minimum Read or Write Cycle Time
54
62
70
ns
tPC
Minimum EDO Cycle Time
14
16
18
ns
Functional Description
The A42L8316 reads and writes data by multiplexing an
18-bit address into a 9-bit row and 9-bit column address.
RAS and CAS are used to strobe the row address and the
column address, respectively.
The A42L8316 has two CAS inputs: LCAS controls I/O0-
I/O7, and
UCAS controls I/O8 - I/O15, UCAS and LCAS
function in an identical manner to CAS in that either will
generate an internal CAS signal. The CAS function and
timing are determined by the first CAS ( UCAS or
LCAS ) to transition low and by the last to transition high.
Byte Read and Byte Write are controlled by using LCAS
and
UCAS separately.
A Read cycle is performed by holding the WE signal high
during RAS / CAS operation. A Write cycle is executed by
holding the WE signal low during RAS / CAS operation;
the input data is latched by the falling edge of WE or
CAS , whichever occurs later. The data inputs and outputs
are routed through 16 common I/O pins, with RAS , CAS ,
WE and OE controlling the in direction.
EDO Page Mode operation all 512 columns within a
selected row to be randomly accessed at a high data rate.
A EDO Page Mode cycle is initiated with a row address
latched by RAS followed by a column address latched by
CAS . While holding RAS low, CAS can be toggled to
strobe changing column addresses, thus achieving shorter
cycle times.
The A42L8316 offers an accelerated Fast Page Mode
cycle through a feature called Extended Data Out, which
keeps the output drivers on during the CAS precharge
time (tcp). Since data can be output after CAS goes high,
the user is not required to wait for valid data to appear
before starting the next access cycle. Data-out will remain
valid as long as RAS and OE are low, and WE is high;
this is the only characteristic which differentiates Extended
Data Out operation from a standard Read or Fast Page
Read.
A memory cycle is terminated by returning both RAS and
CAS high. Memory cell data will retain its correct state by
maintaining power and accessing all 512 combinations of
the 9-bit row addresses, regardless of sequence, at least
once every 8ms through any RAS cycle (Read, Write) or
RAS Refresh cycle ( RAS -only, CBR, or Hidden). The CBR
Refresh cycle automatically controls the row addresses by
invoking the refresh counter and controller.
Power-On
The initial application of the VCC supply requires a 200 µs
wait followed by a minimum of any eight initialization cycles
containing a RAS clock. During Power-On, the VCC
current is dependent on the input levels of RAS and CAS .
It is recommended that RAS and CAS track with VCC or
be held at a valid VIH during Power-On to avoid current
surges.


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