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STW120NF10 Datasheet(PDF) 5 Page - STMicroelectronics |
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STW120NF10 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB/F/PW120NF10 Electrical characteristics Doc ID 9522 Rev 7 5/21 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=50 V, ID= 60 A, RG=4.7 Ω, VGS=10 V (see Figure 15) - 25 90 132 68 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 110 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 440 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=120 A, VGS=0 -1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, di/dt = 100 A/µs, VDD=40 V, Tj=150 °C (see Figure 20) - 152 760 10 ns nC A |
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