SN65HVD72

SN65HVD75

SN65HVD78

SLLSE11C – MARCH 2012 – REVISED SEPTEMBER 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Table 2. DRIVER FUNCTION TABLE

INPUT

ENABLE

OUTPUTS

D

DE

A

B

H

H

H

L

Actively drive bus High

L

H

L

H

Actively drive bus Low

X

L

Z

Z

Driver disabled

X

OPEN

Z

Z

Driver disabled by default

OPEN

H

H

L

Actively drive bus High by default

Table 3. RECEIVER FUNCTION TABLE

DIFFERENTIAL INPUT

ENABLE

OUTPUT

RE

R

L

H

Receive valid bus High

L

?

Indeterminate bus state

L

L

Receive valid bus Low

X

H

Z

Receiver disabled

X

OPEN

Z

Receiver disabled by default

Open-circuit bus

L

H

Fail-safe high output

Short-circuit bus

L

H

fail-safe high output

Idle (terminated) bus

L

H

fail-safe high output

2

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