MTW7N80E

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

800

—

—

1,030

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 800 Vdc, VGS = 0 Vdc)

(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

—

3.0

7.0

4.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)

RDS(on)

—

0.87

1.0

Ohm

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 7.0 Adc)

(ID = 3.5 Adc, TJ = 125°C)

VDS(on)

—

—

6.8

—

10

10.5

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)

gFS

4.0

7.63

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

25 Vdc V

0 Vdc

Ciss

—

3000

4160

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

244

490

Reverse Transfer Capacitance

f = 1.0 MHz)

Crss

—

46

90

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(V

400 Vd

I

7 0 Ad

td(on)

—

20

40

ns

Rise Time

(VDD = 400 Vdc, ID = 7.0 Adc,

VGS =10Vdc

tr

—

37

85

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

84

165

Fall Time

G

)

tf

—

49

105

Gate Charge

(See Figure 8)

(V

400 Vd

I

7 0 Ad

QT

—

70

105

nC

(VDS = 400 Vdc, ID = 7.0 Adc,

VGS = 10 Vdc)

Q1

—

13

—

VGS = 10 Vdc)

Q2

—

28

—

Q3

—

23

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 7.0 Adc, VGS = 0 Vdc)

(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.817

0.7

1.14

—

Vdc

Reverse Recovery Time

(See Figure 14)

(I

7 0 Ad

V

0 Vd

trr

—

651

—

ns

(See Figure 14)

(IS = 7.0 Adc, VGS = 0 Vdc,

ta

—

164

—

( S

,

GS

,

dIS/dt = 100 A/µs)

tb

—

487

—

Reverse Recovery Stored Charge

QRR

—

4.78

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

4.5

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

13

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.