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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS power FET is designed to withstand high

energy in the avalanche and commutation modes. This new energy

efficient design also offers a drain–to–source diode with fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters, PWM motor controls,

and other inductive loads. The avalanche energy capability is

specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

• Avalanche Energy Specified

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

100

Vdc

Drain–Gate Voltage (RGS = 1 MΩ)

VDGR

100

Vdc

Gate–Source Voltage — Continuous

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current — Continuous @ TC = 25°C

ID

IDM

100

300

Adc

Apk

Total Power Dissipation

Derate above 25

°C

PD

300

2.38

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25 Ω )

EAS

250

mJ

Thermal Resistance — Junction to Case

R

θJC

R

θJA

0.42

40

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc.

TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

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by MTY100N10E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MTY100N10E

TMOS POWER FET

100 AMPERES

100 VOLTS

RDS(on) = 0.011 OHM

CASE 340G–02, STYLE 1

TO–264

Motorola Preferred Device

®

D

S

G