Electronic Components Datasheet Search |
|
Y100N10E Datasheet(PDF) 1 Page - Motorola, Inc |
|
Y100N10E Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 8 page 1 Motorola TMOS Power MOSFET Transistor Device Data Designer's™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Drain–Gate Voltage (RGS = 1 MΩ) VDGR 100 Vdc Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) VGS VGSM ±20 ±40 Vdc Vpk Drain Current — Continuous @ TC = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) ID IDM 100 300 Adc Apk Total Power Dissipation Derate above 25 °C PD 300 2.38 Watts W/ °C Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25 Ω ) EAS 250 mJ Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient R θJC R θJA 0.42 40 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Order this document by MTY100N10E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTY100N10E TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM CASE 340G–02, STYLE 1 TO–264 Motorola Preferred Device ® D S G © Motorola, Inc. 1995 |
Similar Part No. - Y100N10E |
|
Similar Description - Y100N10E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |