IS62C5128BL-45HI datasheet(7/14 Pages) ETC2

Part #	IS62C5128BL-45HI

Description	512K x 8 HIGH-SPEED CMOS STATIC RAM

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Integrated Silicon Solution, Inc. — www.issi.com

7

Rev. B

06/28/2011

IS62C5128BL, IS65C5128BL

WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (OverOperatingRange)

-45

Symbol Parameter

Min. Max.

Unit

twC

WriteCycleTime

45

—

ns

tsCe

CE

toWriteEnd

35

—

ns

taw

AddressSetupTime

35

—

ns

toWriteEnd

tha

AddressHoldfromWriteEnd

0

—

ns

tsa

AddressSetupTime

0

—

ns

tPwe1 WEPulseWidth(OE=High)

35

—

ns

tPwe2 WEPulseWidth(OE=Low)

35

—

ns

tsd

DataSetuptoWriteEnd

25

—

ns

thd

DataHoldfromWriteEnd

0

—

ns

thzwe(2) WELOWtoHigh-ZOutput

—

15

ns

tlzwe(2) WEHIGHtoLow-ZOutput

5

—

ns

Notes:

1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0to3.0Vand

outputloadingspecifiedinFigure1.

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.

3. TheinternalwritetimeisdefinedbytheoverlapofCELOW,andWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,

butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfalling

edgeofthesignalthatterminatesthewrite.

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