©2002 Fairchild Semiconductor Corporation

Rev. A3, August 2002

PNP Epitaxial Silicon Transistor

Symbol

Parameter

Value

Units

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-5

V

Collector Current

-100

mA

Collector Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

-40

V

Collector-Emitter Breakdown Voltage

-40

V

Collector Cut-off Current

-0.1

µA

DC Current Gain

100

600

Collector-Emitter Saturation Voltage

-0.3

V

Output Capacitance

f=1MHz

5.5

pF

Current Gain Bandwidth Product

200

MHz

R

Input Resistor

32

47

62

K

Ω

FJX4012R

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R=47K

Ω)

• Complement to FJX3012R

Equivalent Circuit

B

E

C

R

R6 2

Marking

1. Base 2. Emitter 3. Collector

1

2

SOT-323

3