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STX817A-AP Datasheet(PDF) 4 Page - STMicroelectronics

Part No. STX817A-AP
Description  PNP Medium power transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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Electrical characteristics
STX817A
4/9
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE =-80V
-500
µA
ICEO
Collector cut-off current
(IB =0)
VCE =-80V
-1
mA
IEBO
Emitter cut-off current
(IC =0)
VEB =-5V
-100
µA
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB =0)
IC =-10mA
-80
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC =-100mA IB =-10mA
IC =-1A
IB =-100mA
-0.25
-0.5
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC =-100mA IB =-10mA
IC =-1A
IB =-100mA
-1
-1.1
V
V
hFE (1)
DC current gain
IC =-100mA VCE =-2V
IC =-500mA VCE =-2V
IC =-1A
VCE =- 2V
140
80
25
ft
Transition frequency
IC =-0.1A
VCE =-10V
50
MHz
Obsolete
Product(s)
- Obsolete
Product(s)




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