MMBTA06WT1G datasheet(3/5 Pages) ONSEMI

Part #	MMBTA06WT1G

Description	Driver Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBTA06W, SMMBTA06W,

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3

Figure 2. Current−Gain — Bandwidth Product

Figure 3. Capacitance

Figure 4. Switching Time

100

200

2.0

IC, COLLECTOR CURRENT (mA)

300

200

100

70

50

30

10

100

0.1

VR, REVERSE VOLTAGE (VOLTS)

80

60

40

20

10

8.0

20

VCE = 2.0 V

TJ = 25°C

3.0

5.0 7.0

10

20

30

50

70

50

1.0

2.0

5.0

0.2

0.5

6.0

4.0

Cibo

Cobo

20

10

IC, COLLECTOR CURRENT (mA)

200

100

50

20

10

100

50

200

500

1.0 k

500

VCC = 40 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

tr

5.0 7.0

30

70

300

700

30

70

td @ VBE(off) = 0.5 V

300

Figure 5. Active−Region Safe Operating Area

10

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

500

200

100

50

20

10

30

2.0

5.0

50

1.0 k

1.0 ms

1.0 s

TA = 25°C

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

100

70

20

3.0

7.0

100

ms

TC = 25°C

700

300

30

70

Figure 6. DC Current Gain

2.0

500

0.5

IC, COLLECTOR CURRENT (mA)

400

200

100

80

60

40

10

TJ = 125°C

1.0

3.0

5.0

VCE = 1.0 V

20

100

30

50

200 300

25

°C

-55

°C

Figure 7. “ON” Voltages

10

500

1.0

IC, COLLECTOR CURRENT (mA)

1.0

0.8

0.6

0.4

0.2

0

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

0.5

2.0

5.0

200

20

50

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