SMMBTA06WT3G datasheet(2/5 Pages) ONSEMI

Part #	SMMBTA06WT3G

Description	Driver Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBTA06W, SMMBTA06W,

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

80

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO

4.0

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ICES

−

0.1

mAdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ICBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

100

−

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.25

Vdc

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc)

VBE(on)

−

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

fT

100

−

MHz

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Switching Time Test Circuits

OUTPUT

TURN-ON TIME

-1.0 V

VCC

+40 V

RL

* CS t 6.0 pF

RB

100

Vin

5.0

mF

tr = 3.0 ns

0

+10 V

5.0

ms

OUTPUT

TURN-OFF TIME

+VBB

VCC

+40 V

RL

* CS t 6.0 pF

RB

100

Vin

5.0

mF

tr = 3.0 ns

5.0

ms

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

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