750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

SUPER HIGH-POWER GaAlAs IR EMITTERS

OD-50L

FEATURES

• Ultra high power output

• Four wire bonds on die corners

• Very narrow optical beam

• Standard 3-lead TO-39 hermetic package

• Chip size .030 x .030 inches

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Two cathode

pins

must be externally connected together.

Spectral Bandwidth at 50%, Δλ

Half Intensity Beam Angle, θ

Capacitance, C

Rise Time

Fall Time

Continuous Forward Current

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

5

500

880

80

7

1.65

30

90

0.7

0.7

2

mW/sr

nm

nm

Deg

Volts

Volts

pF

μsec

μsec

1000mW

500mA

10A

5V

260°C

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

mW

40

50

600

1Derate per Thermal Derating Curve above 25°C

2Derate linearly above 25°C

.250

.262

.018

.025

.071

.095

.246

.254

GLASS

DOME

.500

.200

ANODE

(CASE)

CATHODE

.040

.031

45°

.357

.362

.100

.324

.332

Storage and Operating Temperature Range

Maximum Junction Temperature

-55°C to 100°C

100°C

150°C/W Typical

60°C/W Typical

THERMAL PARAMETERS

1Heat transfer minimized by measuring in still air with minimum heat conducting through leads

2Air circulating at a rapid rate to keep case temperature at 25°C

RoHS

Revision February 26, 2013