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BAV21 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAV21 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 1999 May 25 4 NXP Semiconductors Product data sheet General purpose diodes BAV20; BAV21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 100 mA − 1.0 V IF = 200 mA − 1.25 V IR reverse current see Fig.5 VR = VRmax − 100 nA VR = VRmax; Tj = 150 °C − 100 μA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 5 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 − 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W |
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