BAV99_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 8 — 18 November 2010

3 of 14

NXP Semiconductors

BAV99 series

High-speed switching diodes

5.

Limiting values

[1]

Single diode loaded.

[2]

Double diode loaded.

[3]

[4]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[5]

Soldering points at pins 2, 3, 5 and 6.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

repetitive peak reverse

voltage

-100

V

reverse voltage

-

100

V

forward current

BAV99

[1] -215

mA

[2] -125

mA

BAV99S

[1] -200

mA

BAV99W

[1] -150

mA

[2] -130

mA

repetitive peak forward

current

-500

mA

non-repetitive peak

forward current

square wave

[3]

4

A

-

1

A

-

0.5

A

total power dissipation

[1][4]

BAV99

250

mW

BAV99S

[5] -250

mW

BAV99W

200

mW

Per device

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C