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5962R9563001VYC Datasheet(PDF) 10 Page - List of Unclassifed Manufacturers |
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5962R9563001VYC Datasheet(HTML) 10 Page - List of Unclassifed Manufacturers |
10 / 27 page STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95630 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL N SHEET 10 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55 °C ≤ TA ≤ +125°C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Break-before-make 8/ time delay tD CL = 50 pF, RL = 1 kΩ, 9 01,02, 25 ns see figure 5 10,11 03,04, 05 5 M, D, P, L, R, F 4/ 7/ 9/ 9 3/ 5 Propagation delay 8/ time address inputs to I/O channels tON(A), tOFF(A) CL = 50 pF, RL = 10 kΩ, 9 01 0.6 µs see figure 5 02,03, 04,05 1.25 10,11 01 1.0 02,03, 04,05 1.5 M, D, P, L, R, F 9 3/ 01 3.0 4/ 7/ 9/ 02,03, 04,05 1.5 Propagation delay 8/ time enable to I/O channels tON(EN), tOFF(EN) CL = 50 pF, RL = 1 kΩ, 9 01 0.6 µs see figure 5 02,03, 04,05 1.25 10,11 01 1.0 02,03, 04,05 1.5 M, D, P, L, R, F 9 3/ 01 3.0 4/ 7/ 9/ 02,03, 04,05 1.5 1/ Unless otherwise specified, VAH (logic level high) = 4.0 V dc, VAL (logic level low) = 0.8 V dc, VEN = 4.0 V, and VREF = 5.0 V dc. For device types 01, 02, and 04, V+ = +15 V dc, V- = -15 V dc. For device types 03 and 05, tested over tolerance range of +10%, V+ = +13.2 V dc, V- = -13.2 V dc. 2/ Input current of one node. 3/ RHA device type 01 (device classes Q and V) supplied to this drawing will meet all RHA levels M, D, P, L, R. However, device type 01 is irradiated and tested only “R” level in accordance with MIL-STD-883 method 1019 condition A. RHA device types 02, 03, 04, and 05 (device classes Q or V) supplied to this drawing will meet all RHA levels M, D, P, L, R and F. However, device types 02, 03, 04 and 05 are irradiated and tested only at the “F” level in accordance with MIL-STD-883 method 1019 condition A (high dose rate). RHA device types 02, 03, 04 and 05 supplied on this drawing have had characterization testing performed to a level of 150 krads(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13.1.1. (see paragraph 1.5 herein). In addition, device types 04 and 05 (device class V) supplied to this drawing are production lot acceptance tested on a wafer by wafer basis to the “L” level (50 krads(Si)) in accordance with MIL-STD-883 method 1019 condition D (low dose rate). RHA device type 02 (device class T) supplied to this drawing will meet all RHA levels M, D, P, L, R. However device type 02 is irradiated and tested only “R” level in accordance with MIL-STD-883 method 1019 condition A. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25°C. |
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