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BT132-600D Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BT132-600D
Description  Triacs logic level
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BT132-600D Datasheet(HTML) 3 Page - NXP Semiconductors

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1;3 Semiconductors
Product specification
Triacs
BT132 series D
logic level
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-lead
Thermal resistance
full cycle
-
-
60
K/W
junction to lead
half cycle
-
-
80
K/W
R
th j-a
Thermal resistance
pcb mounted;lead length = 4mm
-
150
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
2.0
5
mA
T2+ G-
-
2.5
5
mA
T2- G-
-
2.5
5
mA
T2- G+
-
5.0
10
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
1.6
10
mA
T2+ G-
-
4.5
15
mA
T2- G-
-
1.2
10
mA
T2- G+
-
2.2
15
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
1.2
10
mA
V
T
On-state voltage
I
T = 5 A
-
1.4
1.70
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A; Tj = 125 ˚C
0.25
0.4
-
V
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 ˚C;
-
5
-
V/
μs
off-state voltage
exponential waveform; R
GK = 1 k
Ω
t
gt
Gate controlled turn-on
I
TM = 6 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
μs
time
dI
G/dt = 5 A/
μs
January 1998
2
Rev 1.000


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