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PMEG1030EJ Datasheet(PDF) 1 Page - NXP Semiconductors |
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PMEG1030EJ Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 10 page 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection encapsulated in small SMD plastic packages. 1.2 Features Forward current: 3 A Reverse voltage: 10 V Ultra low forward voltage Small and flat lead SMD package 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switched-mode power supply Inverse polarity protection Low power consumption applications 1.4 Quick reference data [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. PMEG1030EH; PMEG1030EJ 10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers Rev. 04 — 15 January 2010 Product data sheet Table 1. Product overview Type number Package Configuration NXP JEITA PMEG1030EH SOD123F - single isolated diodes PMEG1030EJ SOD323F SC-90 single isolated diodes Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tsp ≤ 55 °C --3 A VR reverse voltage - - 10 V VF forward voltage IF =3A [1] - 390 530 mV |
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