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AUIRLR3114ZTR Datasheet(PDF) 2 Page - International Rectifier |
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AUIRLR3114ZTR Datasheet(HTML) 2 Page - International Rectifier |
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2 / 14 page  AUIRLR/U3114Z 2 www.irf.com S D G S D G Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.15mH RG = 25Ω, IAS = 42A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material). Rθ is measured at TJ approximately 90°C. Calculated continuous current based on maximum allowable junction temperature. Package limitation is 42A. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.9 ––– 5.2 6.5 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V gfs Forward Transconductance 98 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– 40 56 Qgs Gate-to-Source Charge ––– 12 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 18 ––– td(on) Turn-On Delay Time ––– 25 ––– tr Rise Time ––– 140 ––– td(off) Turn-Off Delay Time ––– 33 ––– ns tf Fall Time ––– 50 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3810 ––– Coss Output Capacitance ––– 650 ––– Crss Reverse Transfer Capacitance ––– 350 ––– pF Coss Output Capacitance ––– 2390 ––– Coss Output Capacitance ––– 580 ––– Coss eff. Effective Output Capacitance ––– 820 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 30 45 ns Qrr Reverse Recovery Charge ––– 27 41 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDD = 20V ID = 42A RG = 3.7Ω VDS = VGS, ID = 100μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 4.5V e Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 42A e p-n junction diode. TJ = 25°C, IS = 42A, VGS = 0V e TJ = 25°C, IF = 42A, VDD = 20V di/dt = 100A/μs e VGS = 0V, VDS = 0V to 32V f MOSFET symbol showing the integral reverse VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz 500 VGS = 4.5V, ID = 42A e VGS = 16V VGS = -16V VDS = 20V VDS = 10V, ID = 42A ID = 42A Conditions VGS = 4.5V e VGS = 0V ––– ––– ––– ––– m Ω μA nA 42 k |
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