PEMD3_PIMD3_PUMD3_10

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 10 — 15 November 2009

4 of 11

NXP Semiconductors

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors; R1 = 10 k

Ω, R2 = 10 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB with 65

μm copper strip line, standard footprint.

[3]

Reflow soldering is the only recommended soldering method.

7.

Characteristics

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

in free air

SOT363

[1] --625

K/W

SOT457

[2] --417

K/W

SOT666

[1][3] --625

K/W

Per device

thermal resistance from

junction to ambient

in free air

SOT363

[1] --416

K/W

SOT457

[2] --208

K/W

SOT666

[1][3] --416

K/W

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

collector-base cut-off

current

-

-

100

nA

collector-emitter

cut-off current

-

-

1

μA

--

50

μA

emitter-base cut-off

current

-

-

400

μA

DC current gain

30

-

-

collector-emitter

saturation voltage

-

-

150

mV

1.1

0.8

V

2.5

1.8

-

V

R1

bias resistor 1 (input)

7

10

13

k

Ω

R2/R1

bias resistor ratio

0.8

1

1.2

collector capacitance

f=1MHz

--

-

TR1 (NPN)

-

-

2.5

pF

TR2 (PNP)

-

-

3

pF