MUN5211DW1T1 SERIES

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

—

—

100

nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

—

—

500

nAdc

Emitter-Base Cutoff Current

MUN5211DW1T1

(VEB = 6.0 V, IC = 0)

MUN5212DW1T1

MUN5213DW1T1

MUN5214DW1T1

MUN5215DW1T1

MUN5216DW1T1

MUN5230DW1T1

MUN5231DW1T1

MUN5232DW1T1

MUN5233DW1T1

MUN5234DW1T1

MUN5235DW1T1

IEBO

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

50

—

—

Vdc

Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)

V(BR)CEO

50

—

—

Vdc

ON CHARACTERISTICS(3)

DC Current Gain

MUN5211DW1T1

(VCE = 10 V, IC = 5.0 mA)

MUN5212DW1T1

MUN5213DW1T1

MUN5214DW1T1

MUN5215DW1T1

MUN5216DW1T1

MUN5230DW1T1

MUN5231DW1T1

MUN5232DW1T1

MUN5233DW1T1

MUN5234DW1T1

MUN5235DW1T1

hFE

35

60

80

80

160

160

3.0

8.0

15

80

80

80

60

100

140

140

350

350

5.0

15

30

200

150

140

—

—

—

—

—

—

—

—

—

—

—

—

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

(IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1

(IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1

MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1

VCE(sat)

—

—

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

MUN5211lDW1T1

MUN5212DW1T1

MUN5214DW1T1

MUN5215DW1T1

MUN5216DW1T1

MUN5230DW1T1

MUN5231DW1T1

MUN5232DW1T1

MUN5233DW1T1

MUN5234DW1T1

MUN5235DW1T1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

MUN5213DW1T1

VOL

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

Vdc

3. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%