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79C0832RPQH20 Datasheet(PDF) 7 Page - Maxwell Technologies |
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79C0832RPQH20 Datasheet(HTML) 7 Page - Maxwell Technologies |
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7 / 19 page  7 02.14.06 REV 15 All data sheets are subject to change without notice ©2006 Maxwell Technologies All rights reserved 8 Megabit (256K x 32-Bit) EEPROM MCM 79C0832 Data Latch Time -150 -200 t DL 9, 10, 11 300 400 -- -- ns Byte Load Window -150 -200 t BL 9, 10, 11 100 200 -- -- µs Byte Load Cycle -150 -200 t BLC 9, 10, 11 .55 .95 30 30 µs Time to Device Busy -150 -200 t DB 9, 10, 11 120 170 -- -- ns Write Start Time 3 -150 -200 t DW 9, 10, 11 150 250 -- -- ns RES to Write Setup Time4 -150 -200 t RP 9, 10, 11 100 200 -- -- µs V CC to RES Setup Time 4 -150 -200 t RES 9, 10, 11 1 3 -- -- µs 1. Use this device in a longer cycle than this value. 2. t WC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after t DW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. TABLE 9. 79C0832 MODE SELECTION 1 PARAMETER CE 2 OE WE I/O RES RDY/BUSY Read V IL V IL V IH D OUT V H V OH Standby V IH X X High-Z X V OH Write V IL V IH V IL D IN V H V OH --> VOL Deselect V IL V IH V IH High-Z V H V OH Write Inhibit X X V IH -- X -- XV IL X-- X -- Data Polling V IL V IL V IH Data Out (I/O7) V H V OL Program Reset X X X High-Z V L V OH 1. Refer to the recommended DC operating conditions. 2. For CE 0-1 only one CE can be used (“on”) at a time. TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION (V CC = 5V ± 10%, T A = -55 TO +125° C) PARAMETER SYMBOL SUBGROUPS MIN 1 MAX UNITS |
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