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MSC1202Y3RHHR Datasheet(PDF) 2 Page - Texas Instruments

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Part # MSC1202Y3RHHR
Description  Precision Analog-to-Digital Converter and Current-Output Digital-to-Analog Converter
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

MSC1202Y3RHHR Datasheet(HTML) 2 Page - Texas Instruments

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MSC1200
MSC1201
MSC1202
SBAS317E − APRIL 2004 − REVISED MAY 2006
www.ti.com
2
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
FLASH MEMORY
(BYTES)
ADC RESOLUTION
(BITS)
PACKAGE
MARKING
MSC1200Y2
4k
24
MSC1200Y2
MSC1200Y2
4k
24
MSC1200Y2
MSC1200Y3
8k
24
MSC1200Y3
MSC1200Y3
8k
24
MSC1200Y3
MSC1201Y2
4k
24
MSC1201Y2
MSC1201Y2
4k
24
MSC1201Y2
MSC1201Y3
8k
24
MSC1201Y3
MSC1201Y3
8k
24
MSC1201Y3
MSC1202Y2
4k
16
MSC1202Y2
MSC1202Y2
4k
16
MSC1202Y2
MSC1202Y3
8k
16
MSC1202Y3
MSC1202Y3
8k
16
MSC1202Y3
(1) For the most current package and ordering information, see the Package Option Addendum located at the end of this datasheet, or refer to our
web site at www.ti.com.
MSC120x FAMILY FEATURES
FEATURES(1)
MSC120xY2(2)
MSC120xY3(2)
Flash Program Memory (Bytes)
Up to 4k
Up to 8k
Flash Data Memory (Bytes)
Up to 2k
Up to 4k
Internal Scratchpad RAM (Bytes)
256
256
(1) All peripheral features are the same on all devices; the flash memory size
is the only difference.
(2) The last digit of the part number (N) represents the onboard flash size =
(2N)kBytes.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS(1)
MSC120x
UNITS
Analog Inputs
Input current
Momentary
100
mA
Input current
Continuous
10
mA
Input voltage
AGND − 0.3 to AVDD + 0.3
V
Power Supply
DVDD to DGND
−0.3 to +6
V
AVDD to AGND
−0.3 to +6
V
AGND to DGND
−0.3 to +0.3
V
VREF to AGND
−0.3 to AVDD + 0.3
V
Digital input voltage to DGND
−0.3 to DVDD + 0.3
V
Digital output voltage to DGND
−0.3 to DVDD + 0.3
V
Maximum junction temperature (TJ Max)
+150
°C
Operating temperature range
−40 to +125
°C
Storage temperature range
−65 to +150
°C
Package power dissipation
(TJ Max − TAMBIENT)/qJA
W
Output current, all pins
200
mA
Output pin short-circuit
10
s
Junction to ambient (
qJA)
High K (2s 2p)
21.9
°C/W
Thermal resistance
Junction to ambient (
qJA)
Low K (1s)
103.7
°C/W
Thermal resistance
Junction to case (
qJC)
21.9
°C/W
Digital Outputs
Output current
Continuous
100
mA
I/O source/sink current
100
mA
Power pin maximum
300
mA
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for
extended periods may affect device reliability.


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