BAV200-GS08 datasheet(2/5 Pages) VISHAY

Part #	BAV200-GS08

Description	Small Signal Switching Diodes, High Voltage

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 85544

Rev. 1.7, 25-Apr-08

BAV200/BAV201/BAV202/BAV203

Vishay Semiconductors

For technical support, please contact: Diodes-SSP@vishay.com

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

on PC board

50 mm x 50 mm x 1.6 mm

RthJA

500

K/W

Junction temperature

Tj

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 100 mA

VF

1000

mV

Reverse current

VR = 50 V

BAV200

IR

100

nA

VR = 100 V

BAV201

IR

100

nA

VR = 150 V

BAV202

IR

100

nA

VR = 200 V

BAV203

IR

100

nA

Tj = 100 °C, VR = 50 V

BAV200

IR

15

μA

Tj = 100 °C, VR = 100 V

BAV201

IR

15

μA

Tj = 100 °C, VR = 150 V

BAV202

IR

15

μA

Tj = 100 °C, VR = 200 V

BAV203

IR

15

μA

Breakdown voltage

IR = 100 μA, tp/T = 0.01,

tp = 0.3 ms

BAV200

V(BR)

60

V

BAV201

V(BR)

120

V

BAV202

V(BR)

200

V

BAV203

V(BR)

250

V

Diode capacitance

VR = 0, f = 1 MHz

CD

1.5

pF

Differential forward resistance

IF = 10 mA

rf

5

Ω

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100 Ω

trr

50

ns

Figure 1. Reverse Current vs. Junction Temperature

040

80

120

160

0.01

0.1

1

10

1000

Tj -Junction Temperature (°C)

200

94 9084

100

Scattering Limit

V

R = VRRM

Figure 2. Forward Current vs. Forward Voltage

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

VF - Forward Voltage (V)

2.0

94 9085

Scattering Limit

T

j = 25 °C

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