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DD420 Datasheet(PDF) 2 Page - API Technologies Corp |
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DD420 Datasheet(HTML) 2 Page - API Technologies Corp |
2 / 6 page DD111 DD111M * High Speed Drivers A universal PIN diode driver w ith excellent noise immunity, very f ast sw itching, 100 mA current spikes and available test points f or increasing quiescent output current. 1. W hen using inverting input, connect bias pin 5 to non-inverting input pin 6. 2. W hen using non-inverting input, connect bias pin 5 to inverting input pin 4. 3. For -30 mA output current, connect pin 8 to pin 9. 4. For positive output currents other than 15 mA or 30 mA , an external resistor can be connected bet w een pin 8 and +5V . See graph. 5. The negative output current varies w ith V ee and is specif ied at -12V . W hen driving grounded anode diodes, V ee should be kept at -5V w here the negative current w ill be 5 mA . It may be increased by connecting a resistor f rom TP- (pin 14) to V ee (pin 1). See f igure. * M suf f ix denotes w elded metal package instead of standard epoxy sealed ceramic package. DD211 DD211B DD211M * Dual High Speed Drivers A dual DD111 w ith current programming pins omitted. This driver is of ten used in SPDT applications by driving the inverting input of one channel and the noninverting input of the other channel from the same TTL input signal. 1. W hen using channel 1 inverting input pin 4, connect bias pin 5 to non-inverting input pin 6. 2. W hen using channel 2 inverting input pin 11,. connect bias pin 10 to non-inverting pin 9. 3. W hen using channel 1 non-inverting input pin 6, connect bias pin 5 to inverting input pin 4. 4. W hen using channel 2 non-inverting input pin 9, connect bias pin 10 to inverting input pin 11. 5. The tw o drivers are identical except f or quiescent positive output current, w hich is nominally 15 mA f or DD211 and 30 mA f or DD211B. 6 W hen driving anode-grounded diodes, care must be exercised to avoid excessive pow er dissipation. V ee should be limited to -10 V, at w hich point the negative output current w ill be approximately -10 mA . Consult f actory f or design assistance. * M suf f ix denotes w elded metal package instead of standard epoxy-sealed ceramic package. V ee (– 5 to – 15) Output Ground Inv Input Input Bias Non Input Inv +5 V DC 0.035 Pkg Bottom .115 M A X .015 .002 0'0 TY P 002 (M ) .005 +.001 .425 M A X 7 8 1 14 DD111 X X X X TOP V IEW 0.050 TP– +30mA TP+ 250 M IN V ee (– 5 to – 15) Output Ground Inv Input Input Bias Non Input Inv +5 V DC V ee (– 5 to – 15) Output Ground Inv Input Input Bias Non Input Inv +5 V DC +2 CHA NNEL 1 CHA NNEL 2 .425 SQ M A X DD111 X X X X TOP V IEW .230 M A X .110 .035 .005 ± .001 TOP BOTTOM 250 M IN TY P 1 14 7 9 .015 ± .003 BOTTOM V IEW 0.050 1 14 7 9 .015 M A X 60 0 50 40 30 20 10 600 500 400 300 200 100 0 Continued on next page. |
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