Electronic Components Datasheet Search |
|
NTP30N06L Datasheet(PDF) 4 Page - ON Semiconductor |
|
NTP30N06L Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page NTP30N06, NTB30N06 http://onsemi.com 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) 1000 100 1 0.1 1000 100 1 12 10 8 6 4 2 0 120 60 20 40 0 32 16 0 10 2400 10 1200 15 5 020 800 400 0 5 Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 25 0 8 4 1 10 100 0.6 0.76 0.68 0.92 1.16 0.1 10 100 1 25 125 150 100 75 175 50 0.84 10 24 1 ID = 30 A TJ = 25°C VGS VGS = 0 V VDS = 0 V TJ = 25°C Crss Ciss Coss Crss Ciss VGS = 20 V SINGLE PULSE TC = 25°C VDS = 30 V ID = 30 A VGS = 10 V VGS = 0 V TJ = 25°C ID = 26 A tf td(off) td(on) tr RDS(on) Limit QT Q2 Q1 10 ms 1 ms 100 ms dc VGS VDS Thermal Limit Package Limit 8 10 ms 1600 2000 12 16 24 10 80 100 20 1.08 |
Similar Part No. - NTP30N06L |
|
Similar Description - NTP30N06L |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |