NTP30N06L datasheet(4/7 Pages) ONSEMI

Part #	NTP30N06L

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTP30N06, NTB30N06

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4

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

Qg, TOTAL GATE CHARGE (nC)

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ, STARTING JUNCTION TEMPERATURE (°C)

1000

100

1

0.1

1000

100

1

12

10

8

6

4

2

0

120

60

20

40

0

32

16

0

10

2400

10

1200

15

5

020

800

400

0

5

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

25

0

8

4

1

10

100

0.6

0.76

0.68

0.92

1.16

0.1

10

100

1

25

125

150

100

75

175

50

0.84

10

24

1

ID = 30 A

TJ = 25°C

VGS

VGS = 0 V

VDS = 0 V

TJ = 25°C

Crss

Ciss

Coss

Crss

Ciss

VGS = 20 V

SINGLE PULSE

TC = 25°C

VDS = 30 V

ID = 30 A

VGS = 10 V

VGS = 0 V

TJ = 25°C

ID = 26 A

tf

td(off)

td(on)

tr

RDS(on) Limit

QT

Q2

Q1

10 ms

1 ms

100

ms

dc

VGS

VDS

Thermal Limit

Package Limit

8

10

ms

1600

2000

12

16

24

10

80

100

20

1.08

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