NVF2955P datasheet(2/5 Pages) ONSEMI

Part #	NVF2955P

Description	Power MOSFET ??0 V, ??.6 A, Single P?묬hannel SOT??23

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Manufacturer	ONSEMI [ON Semiconductor]

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NTF2955, NVF2955, NVF2955P

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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−60

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

66.4

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −60 V

TJ = 25°C

−1.0

mA

TJ = 125°C

−50

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −1.0 mA

−2.0

−4.0

V

Drain−to−Source On Resistance

RDS(on)

VGS = −10 V, ID = −0.75 A

145

170

mW

VGS = −10 V, ID = −1.5 A

150

180

VGS = −10 V, ID = −2.4 A

154

185

Forward Transconductance

gFS

VGS = −15 V, ID = −0.75 A

1.77

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 25 V

492

pF

Output Capacitance

COSS

165

Reverse Transfer Capacitance

CRSS

50

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 30 V,

ID = 1.5 A

14.3

nC

Threshold Gate Charge

QG(TH)

1.2

Gate−to−Source Charge

QGS

2.3

Gate−to−Drain Charge

QGD

5.2

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 10 V, VDD = 25 V,

ID = 1.5 A, RG = 9.1 W

RL = 25 W

11

ns

Rise Time

tr

7.6

Turn−Off Delay Time

td(OFF)

65

Fall Time

tf

38

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 1.5 A

TJ = 25°C

−1.10

−1.30

V

TJ = 125°C

−0.9

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 1.5 A

36

ns

Charge Time

ta

20

Discharge Time

tb

16

Reverse Recovery Charge

QRR

0.139

nC

3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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