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AS1360

Datasheet - A p p l i c a t i o n I n f o r m a t i o n

9 Application Information

Figure 14. AS1360 - Typical Application Diagram

Power Dissipation

Power dissipation (PD) of the AS1360 is the sum of the power dissipated by the p-channel MOSFET and the quiescent current required to bias

the internal voltage reference and the internal power amplifier, and is calculated as:

(EQ 1)

Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as:

(EQ 2)

Total AS1360 power dissipation is calculated as:

PD(Total) = PD (P-Channel MOSFET) + PD (Bias)

(EQ 3)

The internal quiescent bias current (2 A, typ) is such that the PD(Bias) term of (EQ 3) can be disregarded and the maximum power dissipation

mum voltage differential by the maximum output current:

(EQ 4)

Where:

Junction Temperature

perature.

Note:

Thermal resistance is estimated to be the junction temperature-to-air temperature R

(when mounted on 1 square inch of copper). R

(EQ 5)

Therefore:

AS1360

+9V

Alkaline

Battery

GND

1

3

2

1µF

*

1µF

*

*

Tantalum Capacitor