© 2007 Microchip Technology Inc.

DS21826B-page 3

MCP1700

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Peak Output Current .................................... Internally Limited

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature................................... 150°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM;MM)

............... ≥ 4kV; ≥ 400V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input / Output Characteristics

Input Operating Voltage

2.3

—

6.0

V

Note 1

Input Quiescent Current

—1.6

4

µA

Maximum Output Current

250

200

—

—

—

—

mA

Output Short Circuit Current

—

408

—

mA

Current (peak current) measured

10 ms after short is applied.

Output Voltage Regulation

%

V

Note 2

—

50

—

ppm/°C

Note 3

Line Regulation

-1.0

±0.75

+1.0

%/V

Load Regulation

-1.5

±1.0

+1.5

Note 4

Dropout Voltage

—

178

350

mV

Dropout Voltage

—

150

350

mV

Output Rise Time

—

500

—

µs

Output Noise

—3

—

Note 1:

2:

3:

4:

Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

5:

Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

6:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7:

The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.