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VMB80-28F Datasheet(PDF) 1 Page - Advanced Semiconductor |
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VMB80-28F Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 36 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICES VCE = 28 V 10 mA hFE VCE = 5.0 V IC = 500 mA 5.0 --- --- COB VCB = 28 V f = 1.0 MHz 200 pF PG ηη C VCC = 28 V POUT = 80 W f = 88 MHz 10 60 dB % NPN SILICON RF POWER TRANSISTOR VMB80-28F DESCRIPTION: The ASI VMB80-28F is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 9.0 A VCBO 65 V VCEO 36 V VEBO 4.0 V PDISS 103 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθ JC 1.05 OC/W PACKAGE STYLE .380 4L FLG ORDER CODE: ASI10748 MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM .220 / 5.59 .230 / 5.84 .105 / 2.67 .085 / 2.16 I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .004 / 0.10 .006 / 0.15 .280 / 7.11 .720 / 18.29 .730 / 18.54 |
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