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SFH615A-3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH615A-3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page SFH615A www.vishay.com Vishay Semiconductors Rev. 1.2, 12-Oct-12 2 Document Number: 83433 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V DC forward current IF 60 mA Forward surge current tp ≤ 10 μs IFSM 2.5 A LED power dissipation at 25 °C Pdiss 70 mW OUTPUT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Ouput power dissipation at 25 °C Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector t = 1 s VISO 5300 VRMS Creepage distance ≥ 7mm Clearance distance ≥ 7mm Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Operation temperature Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 150 °C Soldering temperature (1) 2 mm from case, ≤ 10 s Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.35 1.65 V Reverse current VR = 6 V IR 0.01 10 μA Capacitance VR = 0 V, f = 1 MHz CO 13 pF OUTPUT Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 5.2 pF Collector emitter leakage current VCE = 10 V SFH615A-1 ICEO 250 nA SFH615A-2 ICEO 250 nA SFH615A-3 ICEO 5 100 nA SFH615A-4 ICEO 5 100 nA COUPLER Collector emitter saturation voltage IF = 10 mA, f = 1 MHz VCEsat 0.25 0.4 V Coupling capacitance CC 0.4 pF |
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