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MBRM140T3G Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRM140T3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 110C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg −55 to 150 C Operating Junction Temperature TJ −55 to 125 C Voltage Rate of Change (Rated VR, TJ = 25C) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10 ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 VF TJ = 25C TJ = 85C V (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) 0.36 0.55 0.85 0.30 0.515 0.88 Maximum Instantaneous Reverse Current (Note 2), See Figure 4 IR TJ = 25C TJ = 85C mA (VR = 40 V) (VR = 20 V) 0.5 0.15 25 18 2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2% Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.7 0.3 0.5 0.9 TJ = 85C TJ = 125C TJ = −40C TJ = 25C 100 0.1 10 1.0 0.1 0.7 0.3 0.5 0.9 TJ = 85C TJ = 125C TJ = 25C |
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