NTMFS4C09N datasheet(5/7 Pages) ONSEMI

Part #	NTMFS4C09N

Description	Power MOSFET 30 V, 52 A, Single N?묬hannel, SO?? FL

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NTMFS4C09N

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TYPICAL CHARACTERISTICS

QT

Figure 7. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

QG, TOTAL GATE CHARGE (nC)

22

20

16

12

10

4

2

0

2

4

6

8

10

Figure 8. Resistive Switching Time Variation

vs. Gate Resistance

Figure 9. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0

2

6

8

12

14

18

20

VGS = 10 V

VDD = 15 V

ID = 30 A

TJ = 25°C

QGS

QGD

6

8

14

18

24

VGS = 10 V

VDD = 15 V

ID = 15 A

td(off)

td(on)

tf

tr

TJ = 25°C

VGS = 0 V

TJ = 125°C

4

10

16

Figure 10. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

100

10

1

0.1

0.01

0.1

1

10

100

1000

0 V < VGS < 10 V

RDS(on) Limit

Thermal Limit

Package Limit

10 ms

100 ms

1 ms

10 ms

dc

Figure 11. Maximum Avalanche Energy vs.

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

150

125

100

75

50

25

0

2

6

8

10

16

18

20

Figure 12. GFS vs. ID

ID (A)

25

20

15

30

10

5

0

10

40

50

70

ID = 20 A

4

12

50

45

40

35

20

30

60

80

14

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