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AT49LV008-12TC Datasheet(PDF) 2 Page - ATMEL Corporation |
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AT49LV008-12TC Datasheet(HTML) 2 Page - ATMEL Corporation |
2 / 12 page AT49BV/LV008 2 To allow for simple in-system reprogrammability, the AT49BV/LV008 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV/LV008 is performed by eras- ing the entire 8 megabits of memory and then programming on a byte-by-byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle can be option- ally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of pro- gram and erase cycles is in excess of 10,000 cycles The optional 16K bytes boot block section includes a repro- gramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is perma- nently protected from being reprogrammed. Block Diagram Device Operation READ: The AT49BV/LV008 is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus conten- tion. ERASURE: Before a byte can be reprogrammed, the 1024K bytes memory array (or 1008K bytes if the boot block featured is used) must be erased. The erased state of the memory bits is a logical “1”. The entire device can be erased at one time by using a 6-byte software code. The software chip erase code consists of 6-byte load com- mands to specific address locations with a specific data pattern (please refer to the Chip Erase Cycle Waveforms). After the software chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time needed to erase the whole chip is t EC. If the boot block lockout feature has been enabled, the data in the boot sector will not be erased. BYTE PROGRAMMING: Once the memory array is erased, the device is programmed (to a logical “0”) on a byte-by-byte basis. Please note that a data “0” cannot be programmed back to a “1”; only erase operations can con- vert “0”s to “1”s. Programming is accomplished via the internal device command register and is a 4 bus cycle operation (please refer to the Command Definitions table). The device will automatically generate the required internal program pulses. The program cycle has addresses latched on the falling edge of WE or CE, whichever occurs last, and the data latched on the rising edge of WE or CE, whichever occurs first. Programming is completed after the specified tBP cycle time. The DATA polling feature may also be used to indi- cate the end of a program cycle. BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. The size of the block is 16K bytes. This block, referred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be acti- vated; the boot block’s usage as a write protected region is op tion al to t he use r . Th e add r e ss r a n ge of the AT49BV/LV008 boot block is 00000H to 03FFFH. OE, CE, AND WE LOGIC Y DECODER X DECODER INPUT/OUTPUT BUFFERS DATA LATCH Y-GATING OPTIONAL BOOT BLOCK (16K BYTES) MAIN MEMORY (1008K BYTES) OE WE CE ADDRESS INPUTS VCC GND DATA INPUTS/OUTPUTS I/O7 - I/O0 8 03FFFH 00000H FFFFFH |
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